PART |
Description |
Maker |
CY7C4271V-15JC CY7C4271V-15JI CY7C4271V-25JC CY7C4 |
16Kx9 Low Voltage Deep Sync FIFOs(16Kx9低压深同步先进先出(FIFO 16K/32K/64K/128K x 9 Low-Voltage Deep Sync⑩ FIFOs 16K/32K/64K/128K x 9 Low-Voltage Deep Sync FIFOs 16K/32K/64K/128K x 9 Low-Voltage Deep Sync?/a> FIFOs 16K/32K/64K/128K x 9 Low-Voltage Deep Sync?FIFOs
|
Cypress Semiconductor Corp.
|
CY7C4265V CY7C4275V CY7C4255V CY7C4285V 7C4285V |
32K/64Kx18 Low Voltage Deep Sync FIFOs From old datasheet system
|
Cypress
|
CY7C4261 CY7C4271 7C4261 |
16Kx9 Deep Sync FIFOs(16Kx9 位深同步先进先出(FIFO From old datasheet system 16K/32Kx9 Deep Sync FIFOs
|
Cypress Semiconductor Corp.
|
CY7C4265 CY7C4255 |
8K/16Kx18 Deep Sync FIFOs
|
Cypress Semiconductor Corp.
|
CY7C425505 CY7C4265-10ASXC CY7C4265-10AXI |
8K/16K x 18 Deep Sync FIFOs
|
Cypress Semiconductor
|
CY7C4255-35 |
8K/16K x 18 Deep Sync FIFOs
|
Cypress Semiconductor Corp.
|
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
CY7C1339G-166BGC CY7C1339G-133AXE CY7C1339G-200BGX |
4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 3.5 ns, PBGA119 4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 4 ns, PQFP100 4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 2.8 ns, PBGA119 4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存 (KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD42S16400G5-60-7JD UPD42S16400G5-60-7KD UPD42S16 |
32K x 8 Magnetic Nonvolatile CMOS RAM 8K/16K x 18 Deep Sync FIFOs x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Maxim Integrated Products, Inc.
|